With more than 40 years of experience in germanium crystal pulling, our facility in Olen, Belgium is one of the few in the world capable of pulling dislocation-free germanium ingots. Diameters range from 4" to 12” (100 – 300mm).
Thanks to the closely-matching thermal and crystallographic properties of germanium and gallium arsenide, epi-ready germanium substrates provide an interesting alternative for the epitaxial growth and/or layer transfer of III-V compounds. For proper nucleation, the wafers are precisely "off-cut" towards the appropriate direction and have been epi-cleaned. To guarantee a pristine growth surface, all production steps are closely monitored using statistical process control, and wafers are carefully inspected. At the end, there is a 100% naked-eye inspection by a trained operator.